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| PD -93769 PROVISIONAL IRG4BAC50W C INSULATED GATE BIPOLAR TRANSISTOR Features * Designed expressly for switch-mode power supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A N-channel Benefits * Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz) Super-220TM (TO-273AA) Max. 600 55 27 220 220 20 170 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.50 --- TBD Max. 0.64 --- 40 --- Units C/W g (oz) www.irf.com 1 1/19/2000 IRG4BAC50W Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.41 -- V/C VGE = 0V, IC = 5.0mA -- 1.93 2.3 IC = 27A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.25 -- IC = 55A See Fig.2, 5 V -- 1.71 -- IC = 27A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.0mA Forward Transconductance ... 27 41 -- S VCE = 100 V, IC = 27A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 5000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff E ts td(on) tr td(off) tf Ets LC LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Collector Inductance Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 180 270 IC = 27A 24 36 nC VCC = 400V See Fig.8 63 95 VGE = 15V 46 -- 33 -- TJ = 25C ns 120 180 IC = 27A, VCC = 480V 57 86 VGE = 15V, RG = 5.0 0.08 -- Energy losses include "tail" 0.32 -- mJ See Fig. 9, 10, 14 0.40 0.5 31 -- TJ = 150C, 43 -- IC = 27A, VCC = 480V ns 210 -- VGE = 15V, RG = 5.0 62 -- Energy losses include "tail" 1.14 -- mJ See Fig. 10,11, 14 2.0 -- nH Measured 5mm from package 5.0 -- 3700 -- VGE = 0V 260 -- pF VCC = 30V See Fig. 7 68 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See Fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BAC50W 100 F o r b o th : T ria n g u la r w a v e : 80 D uty cy cle: 50% TJ = 125C T s ink = 90C G ate drive as s pecified P o w e r D is s ip a tio n = 4 0 W C la m p vo lta g e : 8 0 % o f ra te d Load Current ( A ) 60 S q u a re wa ve: 6 0 % o f ra te d vo l ta g e 40 20 Ide a l d io de s 0 0.1 1 10 100 A 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 T = 150 C J TJ = 150 C TJ = 25 C TJ = 25 C 10 10 1 1 V GE = 15V 20s PULSE WIDTH 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BAC50W 60 3.0 50 40 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) I C = 54 A 2.0 30 I C = 27 A I C =13.5 A 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BAC50W 8000 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 27A 16 C, Capacitance (pF) 6000 Cies 4000 12 8 2000 Coes Cres 4 0 1 10 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 27A 10 5.0 RG = Ohm VGE = 15V VCC = 480V IC = 54 A 2.0 1 IC = 27 A IC = 13.5 A 1.0 0.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , Gate Resistance (Ohm) RG G , GateResistance () TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BAC50W 3.0 2.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC VGE = Ohm 5.0 = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 1.0 10 SAFE OPERATING AREA 0.0 0 10 20 30 40 50 60 1 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BAC50W L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 90 % 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BAC50W Super-220TM (TO-273AA) Package Outline WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 1/2000 8 www.irf.com |
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